item symbol v ds = 12v f = 2.6 ghz i ds = 5.0a pin = 40.0dbm gate-source breakdown voltage v gso -5 - - i gs = -2.2ma v pinch-off voltage -0.1 -0.3 -0.5 v ds = 5v, i ds = 220ma v v p drain current -8- v ds = 5v, v gs = 0v a i dss drain current - 11.5 15.0 a i dsr output power 48.0 49.0 - dbm p out linear gain (note 1) 11.0 12.0 - db gl power-added efficiency - 50 - % add thermal resistance - 0.8 1.1 channel to case c/w r th conditions unit limits typ. max. min. electrical characteristics (case temperature tc=25 c) case style: iq note 1: the condition for gl is the same as pout except pin = 25.0dbm. features ? push-pull configuration ? high power output: 80w ?high pae: 50%. ?excellent linearity ?suitable for class ab operation. ?hermetically sealed package 1 edition 1.1 october 2001 item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds tc = 25 c v v w c c v gs p t t stg t ch condition 136 -65 to +175 +175 -5 15 rating unit absolute maximum ratings (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 12 volts. 2. the forward and reverse gate currents should not exceed 176 and -51.8 ma respectively with gate resistance of 5 ?. 3. the operating channel temperature (t ch ) should not exceed 145 c. description the FLL810IQ-3C is an 80 watt gaas fet that employs a push-pull design. this device offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 2.5 to 2.7 ghz. this new product is uniquely suited for use in mmds applications as it offers high gain, long term reliability and ease of use. FLL810IQ-3C l-band high power gaas fet
2 FLL810IQ-3C l-band high power gaas fet output power & add vs. input power 32 30 34 36 40 38 44 42 46 48 50 22 24 26 28 32 30 34 36 38 40 input power (dbm) v ds = 12v i ds = 5a output power (dbm) 10 0 20 30 40 50 60 add (%) pout add im3 ids(rf) im5 imd & ids(rf) vs. total output power -60 -50 -40 -30 2 3 4 5 6 7 8 34 36 38 40 42 44 total output power (dbm) v ds = 12v i ds = 5a imd (dbc) ids(rf) (a) fo = 2.6ghz f1 = 2.61ghz 34 36 38 40 42 44 46 48 50 2.5 2.4 2.8 2.6 2.7 frequency (ghz) output power (dbm) output power vs. frequency 34dbm 39dbm 30dbm 26dbm 22dbm v ds = 12v i ds = 5a
3 FLL810IQ-3C l-band high power gaas fet s-parameters v ds = 12v, i ds = 2500ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1500 .856 137.9 1.167 39.2 .021 43.0 .841 167.3 1600 .786 131.5 1.430 25.6 .026 31.2 .805 167.9 1700 .698 124.7 1.722 10.3 .029 15.8 .790 169.2 1800 .579 118.4 2.020 -8.0 .034 0.9 .777 170.2 1900 .455 115.3 2.323 -27.7 .036 -16.4 .795 171.0 2000 .347 115.2 2.564 -48.5 .039 -39.5 .818 169.7 2100 .247 119.8 2.784 -67.9 .041 -59.6 .819 167.1 2200 .141 142.0 3.064 -90.1 .041 -84.9 .781 163.5 2300 .200 -160.2 3.418 -114.9 .039 -114.5 .668 162.4 2400 .425 -159.8 3.446 -143.7 .035 -150.5 .560 170.4 2500 .634 -179.2 3.332 -173.7 .029 170.0 .556 -175.3 2600 .738 156.5 2.845 161.4 .024 122.6 .659 -168.5 2700 .750 129.4 2.436 134.5 .023 84.7 .747 -168.5 2800 .693 94.5 2.125 113.9 .020 47.3 .822 -170.0 2900 .620 48.8 1.618 89.3 .020 12.3 .879 -172.2 3000 .601 0.2 1.345 67.3 .019 -15.0 .910 -175.1 3100 .713 -39.5 1.031 50.9 .017 -35.8 .931 -177.6 3200 .804 -68.6 .748 31.0 .014 -60.2 .922 -179.8 3300 .863 -89.7 .587 19.4 .015 -70.4 .936 178.2 3400 .895 -104.3 .420 9.2 .014 -85.8 .936 176.2 3500 .909 -115.6 .335 0.5 .009 -96.7 .951 174.2 note: this s-parameter data shows measurements performed on a single-ended push-pull fet. these parameters should be used to determine the calculated push-pull s-parameter amplifier designs.
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 2001 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi05019m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL810IQ-3C l-band high power gaas fet case style "iq" 15.50.2 2.40.15 4-0.1 1.90.2 5.5 max. 14.90.2 8.00.15 2.5 min. 2.5 min. 4-r1.30.2 6.0 4-2.60.2 17.40.2 4-2.0 1 2 54 3 6 240.35 20.40.2 45 unit: mm (inches) 1, 2: gate 3: source 4, 5: drain
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